View PBSS301PD_6598450.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product pro?le 1.1 general description pnp low v cesat breakthrough in small signal (biss) transistor in a sot457 (sc-74) smd plastic package. npn complement: pbss301nd. 1.2 features n very low collector-emitter saturation resistance n ultra low collector-emitter saturation voltage n 4 a continuous collector current n up to 15 a peak current n high ef?ciency due to less heat generation 1.3 applications n power management functions n charging circuits n dc-to-dc conversion n mosfet gate driving n power switches (e.g. motors, fans) n thin film transistor (tft) backlight inverter 1.4 quick reference data [1] device mounted on a ceramic printed-circuit board (pcb), al 2 o 3 , standard footprint. [2] pulse test: t p 300 m s; d 0.02. PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor rev. 02 25 april 2005 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - - 20 v i c collector current (dc) [1] -- - 4a i cm peak collector current single pulse; t p 1ms -- - 15 a r cesat collector-emitter saturation resistance i c = - 4a; i b = - 400 ma [2] - 5070m w
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 2 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking 5. limiting values table 2: pinning pin description simpli?ed outline symbol 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector 13 2 4 5 6 4 3 1, 2, 5, 6 sym030 table 3: ordering information type number package name description version PBSS301PD sc-74 plastic surface mounted package; 6 leads sot457 table 4: marking codes type number marking code PBSS301PD c8 table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - - 20 v v ceo collector-emitter voltage open base - - 20 v v ebo emitter-base voltage open collector - - 5v i c collector current (dc) [1] - - 4a i cm peak collector current single pulse; t p 1ms - - 15 a i b base current (dc) - - 0.8 a i bm peak base current single pulse; t p 1ms - - 2a p tot total power dissipation t amb 25 c [2] - 360 mw [3] - 600 mw [4] - 750 mw [1] - 1.1 w [2] [5] - 2.5 w
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 3 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor [1] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [4] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . [5] operated under pulsed conditions: duty cycle d 10 % and pulse width t p 10 ms. t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb; collector mounting pad for collector 6 cm 2 (3) fr4 pcb; collector mounting pad for collector 1 cm 2 (4) fr4 pcb; standard footprint fig 1. power derating curves table 5: limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit (1) t amb ( c) - 75 175 125 25 75 - 25 006aaa270 800 400 1200 1600 p tot (mw) 0 (2) (4) (3)
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 4 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [4] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . [5] operated under pulsed conditions: duty cycle d 10 % and pulse width t p 10 ms. table 6: thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [2] - - 350 k/w [3] - - 208 k/w [4] - - 160 k/w [1] - - 113 k/w [2] [5] - - 50 k/w r th(j-sp) thermal resistance from junction to solder point - - 45 k/w fr4 pcb; standard footprint (1) d =1 (2) d = 0.75 (3) d = 0.5 (4) d = 0.33 (5) d = 0.2 (6) d = 0.1 (7) d = 0.05 (8) d = 0.02 (9) d = 0.01 (10) d =0 fig 2. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa271 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 (3) (4) (5) (6) (7) (8) (9) (10) (1) (2)
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 5 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor fr4 pcb; mounting pad for collector 1 cm 2 (1) d =1 (2) d = 0.75 (3) d = 0.5 (4) d = 0.33 (5) d = 0.2 (6) d = 0.1 (7) d = 0.05 (8) d = 0.02 (9) d = 0.01 (10) d =0 fig 3. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa272 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 (2) (1) (5) (6) (7) (8) (9) (10) (3) (4)
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 6 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor fr4 pcb; mounting pad for collector 6 cm 2 (1) d =1 (2) d = 0.75 (3) d = 0.5 (4) d = 0.33 (5) d = 0.2 (6) d = 0.1 (7) d = 0.05 (8) d = 0.02 (9) d = 0.01 (10) d =0 fig 4. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa273 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10)
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 7 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7: characteristics t amb = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = - 20 v; i e =0a - - - 0.1 m a v cb = - 20 v; i e =0a; t j = 150 c -- - 50 m a i ces collector-emitter cut-off current v ce = - 20 v; v be =0v - - - 0.1 m a i ebo emitter-base cut-off current v eb = - 5 v; i c =0a - - - 0.1 m a h fe dc current gain v ce = - 2 v; i c = - 0.5 a 250 400 - v ce = - 2 v; i c = - 1a [1] 250 400 - v ce = - 2 v; i c = - 2a [1] 200 330 - v ce = - 2 v; i c = - 4a [1] 120 200 - v ce = - 2 v; i c = - 6a [1] 80 130 - v cesat collector-emitter saturation voltage i c = - 0.5 a; i b = - 50 ma - - 35 - 50 mv i c = - 1 a; i b = - 50 ma - - 65 - 90 mv i c = - 2 a; i b = - 200 ma - - 110 - 150 mv i c = - 4 a; i b = - 400 ma [1] - - 200 - 280 mv i c = - 6 a; i b = - 600 ma [1] - - 300 - 420 mv r cesat collector-emitter saturation resistance i c = - 4 a; i b = - 400 ma [1] -5070m w v besat base-emitter saturation voltage i c = - 0.5 a; i b = - 50 ma - - 0.8 - 0.85 v i c = - 1 a; i b = - 50 ma - - 0.84 - 0.9 v i c = - 1 a; i b = - 100 ma [1] - - 0.84 - 1v i c = - 4 a; i b = - 400 ma [1] - - 1.0 - 1.1 v v beon base-emitter turn-on voltage v ce = - 2 v; i c = - 2a - - 0.8 - 1v t d delay time v cc = - 12.5 v; i c = - 3a; i bon = - 0.15 a; i boff = 0.15 a -10- ns t r rise time - 35 - ns t on turn-on time - 45 - ns t s storage time - 200 - ns t f fall time - 80 - ns t off turn-off time - 280 - ns f t transition frequency v ce = - 10 v; i c = - 0.1 a; f = 100 mhz - 80 - mhz c c collector capacitance v cb = - 10 v; i e =i e =0a; f=1mhz -80- pf
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 8 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor v ce = - 2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c v ce = - 2v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 5. dc current gain as a function of collector current; typical values fig 6. base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 7. collector-emitter saturation voltage as a function of collector current; typical values fig 8. collector-emitter saturation voltage as a function of collector current; typical values i c (ma) - 10 - 1 - 10 5 - 10 4 - 10 3 - 1 - 10 2 - 10 006aaa336 400 600 200 800 1000 h fe 0 (1) (2) (3) i c (ma) - 10 - 1 - 10 5 - 10 4 - 10 3 - 1 - 10 2 - 10 006aaa337 - 0.8 - 0.4 - 1.2 - 1.6 v be (mv) 0 (1) (3) (2) 006aaa338 - 10 - 2 - 10 - 1 - 1 - 10 v cesat (v) - 10 - 3 i c (ma) - 10 - 1 - 10 5 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa339 - 10 - 2 - 10 - 1 - 1 - 10 v cesat (v) - 10 - 3 i c (ma) - 10 - 1 - 10 5 - 10 4 - 10 3 - 1 - 10 2 - 10 (2) (1) (3)
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 9 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. base-emitter saturation voltage as a function of collector current; typical values fig 10. collector-emitter saturation resistance as a function of collector current; typical values i c (ma) - 10 - 1 - 10 5 - 10 4 - 10 3 - 1 - 10 2 - 10 006aaa340 - 0.7 - 0.5 - 0.3 - 0.9 - 1.1 - 1.4 v besat (v) - 0.1 (1) (2) (3) 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 006aaa341 i c (ma) - 10 - 1 - 10 5 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3)
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 10 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor t amb =25 c (1) i b = - 200 ma (2) i b = - 180 ma (3) i b = - 160 ma (4) i b = - 140 ma (5) i b = - 120 ma (6) i b = - 100 ma (7) i b = - 80 ma (8) i b = - 60 ma (9) i b = - 40 ma (10) i b = - 20 ma i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c fig 11. collector current as a function of collector-emitter voltage; typical values fig 12. collector-emitter saturation resistance as a function of collector current; typical values v ce (v) 0 - 2.0 - 1.6 - 0.8 - 1.2 - 0.4 006aaa342 - 4 - 2 - 6 - 10 - 8 i c (a) 0 (10) (9) (8) (7) (6) (5) (4) (3) (2) (1) 006aaa343 10 - 1 1 10 10 2 r cesat ( w ) 10 - 2 i c (ma) - 10 - 1 - 10 5 - 10 4 - 10 3 - 1 - 10 2 - 10 (3) (1) (2)
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 11 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 8. test information fig 13. biss transistor switching time de?nition v cc = - 12.5 v; i c = - 3 a; i bon = - 0.15 a; i boff = 0.15 a fig 14. test circuit for switching times 006aaa266 - i bon (100 %) - i b input pulse (idealized waveform) - i boff 90 % 10 % - i c (100 %) - i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 12 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 9. package outline fig 15. package outline sot457 (sc-74) references outline version european projection issue date iec jedec jeita sot457 sc-74 wb m b p d e pin 1 index a a 1 l p q detail x h e e v m a a b y scale c x 13 2 4 5 6 0 1 2 mm plastic surface mounted package; 6 leads sot457 unit a 1 b p cd e h e l p qy w v mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.6 0.2 0.33 0.23 a 1.1 0.9 01-05-04 04-11-08
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 13 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 10. packing information [1] for further information and the availability of packing methods, see section 16 . [2] t1: normal taping [3] t2: reverse taping table 8: packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PBSS301PD sot457 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165
9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 14 of 16 philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 11. revision history table 9: revision history document id release date data sheet status change notice doc. number supersedes PBSS301PD_2 20050425 product data sheet - 9397 750 14959 PBSS301PD_1 modi?cations: ? section 1.3 : acronym tft explained ? figure 2 , 3 and 4 : z th renamed to z th(j-a) ? figure 11 : ?gure notes amended ? section 15 : added PBSS301PD_1 20050404 product data sheet - 9397 750 14486 -
philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 9397 750 14959 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 25 april 2005 15 of 16 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 16. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 25 april 2005 document number: 9397 750 14959 published in the netherlands philips semiconductors PBSS301PD 20 v, 4 a pnp low v cesat (biss) transistor 17. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 packing information. . . . . . . . . . . . . . . . . . . . . 13 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 16 contact information . . . . . . . . . . . . . . . . . . . . 15

▲Up To Search▲

Price & Availability of PBSS301PD

	To Download PBSS301PD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .